Central Facilities

Chemistry Computing Microscopy & Microanalysis Polymer Characterization Spectroscopy X-Ray

Facility Director:	Professor James S. Speck (Speck at mrl.ucsb.edu)
Facility Managers:	Dr. Tom Mates (Mates at mrl.ucsb.edu) Secondary Ion Mass Spectrometry (SIMS) X-ray Photoelectron Spectroscopy (XPS) Surface Elemental Analysis Dr. Jin-Ping Zhang (jpzhang at mrl.ucsb.edu) Transmission Electron Microscopes (TEM) Scientific Manager Scanning Probe Microscopes (SPM) Computational microscopy Dr. Jan P. Löfvander (Löfvander at engineering.ucsb.edu) Focus Ion Beam Microscopes (FIB) Transmission Electron Microscopes (TEM) Technical Manager TEM sample preparation Mark Cornish (Cornish at engineering.ucsb.edu) Scanning Electron Microscopes Transmission Electron Microscopes (TEM) Technical Manager Sample preparation Accounting
Facility Location:	1st Floor of CNSI Building

Major Equipment:

Transmission electron microscopes:

FEI Titan FEG High Resolution TEM/STEM and Analytical Microscope (in installation)

FEI Tecnai G2 Sphera Microscope for Life Science Studies

FEI Tecnai G2 Sphera Microscope w/EDS for Materials Science Studies (Coming)

Scanning electron microscopes:

FEI XL40 Sirion FEG microscope w/EDS System

FEI XL30 Sirion FEG microscope

FEI Inspect S System w/CL System (coming)

Scanning probe microscopes (STM/AFM):

Digital Instruments Multi-mode Nanoscope (2)

Digital Instruments Dimension 3000 microscope

Digital Instruments Dimension 3100 microscope

Asylum MFP-3D SL System

Asylum MFP-3D Bio System

Secondary Ion Mass Spectrometry System:

Physical Electronics 6650 Quadrupole

X-ray Photoelectron Spectroscopy System:

Kratos Axis Ultra w/UPS Capability

Focused Ion Beam System:

FEI Focused Ion Beam (Model DB235 Dual Beam) w/EDS System

Instruments for Sample preparation:

Gatan precision ion polishing system (Model 691) x2

Fischione ion polishing system (Model 1010)

Allied MultiPrep polishing machine (Model 15-1000)

Gatan dimple grinder (Model 650)

Image Processing tools:

Microtek ScanMaker i900 (6400x3200 DPI) Scanner

Epson V700 Dual Lens Scanner for film/image digitization

Electron microscopy simulation:

Software for Scanning Electron Microscopy (SEM)

Software for Transmission Electron Microscopy (TEM)

Recharge Rates:

Equipment: (Subject to changes.)

$60 per hour for TEMs (FEI Sphera) ($87.6 off campus)

$80 per hour for TEM (FEI Titan) ($116.8 off campus)

$50 per hour for SEMs ($73 off campus)

$20 per hour for SPMs (AFMs) ($29.2 off campus)

$50.06 per hour for SIMS and ($73.09 off campus)

$30.27 per hour for XPS ($44.19 off campus)

$100 per hour for FIB ($146 off campus)

Development Engineer:

Will be calculated accordingly. 

Training:

Training class or Workshops for TEM and AFM are due request.
Contact Dr. Jin-Ping Zhang (Zhang at mrl.ucsb.edu)

Electron Microscopy

The electron microscope uses a focused electron beam energized up to 10⁶eV to provide images and chemical information with very high spatial resolution. Since the short wavelength of electron beam and the successful development of low aberration electron optical lenses, the atomic resolution is routinely achievable for transmission electron microscope (TEM), as well as the resolution close to 1 nanometer for scanning electron microscope (SEM). The SEMs collect secondary and back scattered electrons to imaging the surface area, called SEI and BEI, while the TEMs mainly use the transmitted signals of a thin specimen. With a scanning device attached, a TEM can perform both transmission and scanning microscopy. Electron diffraction patterns can be obtained from TEM simultaneously as well as electron channeling patterns for SEM. Chemical analysis with a finely focused beam is another advantage of electron microscopy, such electron dispersive X-ray (EDX) analysis and electron energy loss spectroscopy (EELS). The newly developed high coherent source, field emission gun of single crystal tungsten, has made high-resolution imaging and microanalysis with a beam size less than 1nm for TEM and close to 1nm for SEM possible. Now the power of electron microscopy has been widely used in almost every field of materials research, since it can provide both surface and microstructural information and the microscopes are getting more computerized.

Transmission Electron Microscopes

Location: 1425 CNSI

FEI Tecnai G2 Sphera Microscope for Life Science Studies This microscope is designed for 200kV and lower operation voltages, suitable for studies of biological, organic and other beam sensitive materials. For that purpose, this microscope is equipped with a CCD camera (Gatan Ultrascan 1000 2Kx2K) and a cryo-station for specimen preparation and transfer within liquid nitrogen. With a LaB6 emitter, the resolution is 0.27 nm at 200kV. Features: (1) Tomography with high tilt and large field of view; (2) CompuStage with Smart-Tilt software; (3)Low-dose exposure. Specimen holders: (1) Single tilt holder ±70°; (2) Double tilt holder (x ±70°, y ±30°).; (3) Gatan cryo-transfer holder.  Specification: www.FEI.com

FEI Titan 300 kV FEG TEM/STEM System w/EDS & EELS With a field emission gun (FEG), this microscope is designed for both high resolution TEM/STEM and analytical microscopy. The attachments of this microscope are: (1) A scanning unit with a high-angle annular dark-field (HAADF) detector for scanning TEM (Z-contrast imaging); (2) Gatan Enfina 1000 system for electron energy-loss spectroscopy (EELS); (3) Electron despersive X-ray analysis system (EDXA) for chemical information; (4) Gatan wide-angle CCD (2kx2k) for image recording.  The energy spread is 0.7 eV; Point resolution 0.2nm; information limit <0.1 nm; HR-STEM res. 0.136 nm. Specimen holder: Double tilt holder (x ±22°, y ±15°).  Specification: www.FEI.com

Location: 1427 CNSI

Location: 1423 CNSI

FEI Tecnai G2 Sphera Microscope w/ EDS System for Materials Science Studies This microscope is equipped with a LaB6 emitter and S-twin lens for higher resolution at 200kV.  Also an Oxford electron dispersive X-ray spectroscopy (EDS) system is attached for chemical analysis, and a Gatan UltraScan 1000P CCD camera for image recording (2kx2k). Point resolution 0.24 nm; Line res. 0.14 nm; Cs = 1.2 mm; Cc = 1.2 mm. Specimen holders: (1) Single tilt holder ±40°; (2) Double tilt holder (x ±40°, y ±40°). Specification: www.FEI.com; www.oxford-instruments.com

Scanning Electron Microscopes

FEI XL40 Sirion FEG Digital Scanning Microscope w/EDS High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size).  Oxford Inca x-ray system is attached. Back scattering detector for Z-imaging. Voltage: 500-30keV; Resolution: 1.2 nm @30keV. Specification: www.FEI.com; www.oxford-instruments.com     Location: 1433 CNSI

FEI XL30 Sirion FEG Digital Electron Scanning Microscope High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size). Back scattering detector for Z-imaging. Voltage: 500-30keV; Resolution: 1.2 nm @30keV. Specification: www.FEI.com; www.oxford-instruments.com        Location: 1431 CNSI

FEI Inspect S Electron Scanning Microscope w/ Cathodoluminescence System High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size).  Oxford CL2 cathodoluminescence system will be attached.  Back scattering detector for Z-imaging. Voltage: 200 - 30 kV; Resolution: 3.0 nm @30kV; 10 nm @3kV.     Specification: www.FEI.com; www.oxford-instruments.com      Location: 1435 CNSI

Scanning Probe Microscopy

The scanning probe microscope (SPM) operates exactly as its name implies: a sharp tip is scanning on sample surface in a controlled contact or non-contact mode, and the signals carrying surface information are collected, processed and then plotted on a computer screen. The first base of SPM was scanning tunneling microscope (STM) that was invented 1982. After that, it has also been found not only the tunneling current, but also the atomic force and other kinds of interactions in between tip and sample surface can be probed. Therefore, the category of SPM samples is greatly extended from conducting to non-conducting or soft materials since the tip can work just in a near-surface scan. The name of scanning probe microscopy summarizes scanning tunneling microscopy, atomic force microscopy (AFM), scanning capacitance microscopy (SCM), magnetic force microscopy (MFM) as well as a range of other measuring techniques.

Scanning Probe Microscopes (AFMs)

Veeco Multi-Mode NanoScope I & II This microscope can be performed at both tapping and contact mode with highest resolution manufactured. With either the D-type (10x10x25µm) or the J-type scanner (125x125x5µm), images on both atomic and macroscopic scales can easily be obtained. The microscope performs the full range of SPM techniques to measure surface characteristics such as surface topography, elasticity, friction, adhesion, magnetic fields, and electrical fields. Surfaces of a wide range of materials, including conducting and non-conducting samples, can be examined with this microscope. The 2.5Å monolayer of GaN semiconductors can be easily resolved, as shown in the representative images. Attachments: optical viewing sytem, heating stage, signal access module, and vibration isolation tripod. The second NanoScope is attached with a heater system that enables the measurements at elevated temperatures up to 150° C in a controlled environment. The temperature drift is +/- 0.025° C. Specification: www.Veeco.com      Location: 1442 CNSI

Veeco Dimension 3000/3100 Scanning Probe Microscope These SPMs have the similar functions in surface measurements with the Milti-Mode microscope as stated above. The major difference is that this microscope is designed for imaging a 6" wafer. A large specimen stage is provided and the microscope is located in an anti-vibration hood. Inside the microscope, there is an optical system by the scanner to guide the scan with an image of the sample surface shown on the screen. With this optical image, users can search a specific feature as small as 0.1µm to scan. The hardware design of this microscope is compatible with electric force and magnetic force microscopy without any additional attachments. Specification: www.Veeco.com      Location: 1442 CNSI

Asylum MFP-3D Standard System w/Low Force Indenter Operation Modes: AC, Contact, LFM, Force, Nanolithography, EFM and Conductive AFM, and Low Force Indenter. Features: 90 micron travel in (x,y) and 15 micron in z; X-Y closed loop (non-linearity <0.5%) and Z-closed loop (<0.2%); ARgyle-3D imaging in real time; AFM control program integrated with IGOR pro. Specification: www.AsylumResearch.com      Location: 1442 CNSI

Asylum MFP-3D Bio System w/ Olympus IX71 Inverted Microscope Operation Modes: AC, Contact, LFM, Force, Nanolithography, EFM and Conductive AFM, and Low Force Indenter.  Liquid AFM with closed fluid cell; Fluorescence filters. Features: 90 μm travel in (x,y) & 15 μm in z; X-Y Closed loop (non-linearity <0.5%) & Z-closed loop (<0.2%);  Noise (x,y <0.6nm; z <0.3nm); ARgyle-3D in real time; Software integrated with IGOR Specification: www.AsylumResearch.com Location: 1442 CNSI

Surface Analysis Systems

Physical Electronics 6650 Dynamic Secondary Ion Mass Spectrometry (SIMS) Dynamic SIMS is used for depth profiling solid materials, allowing a determination of elemental composition as a function of depth. The key attributes of SIMS are its unparalleled sensitivity (detection down to ppb levels in some cases) and its high depth resolution (as low as 30 Angstroms). SIMS is not inherently quantitative but can give quantitative results on unknowns if appropriate standards are supplied. In depth profiling mode, up to 12 elements can be monitored as a function of depth in a single scan. And in samples with unknown contaminants, the SIMS can be operated in mass spectrum mode rather than depth profiling mode, to scan a mass range from 0 to 300 a.m.u. Any solid sample can be run, including polymers, metals, ceramics, and semiconductors. A cesium ion gun is used to detect electronegative species and an oxygen ion gun is used to detect electropositive species. Ion images can also be generated, with a lateral resolution down to approximately 8 microns. Specification: www.phi.com      Location: 1430 CNSI

Kratos Axis Ultra X-ray Photoelectron Spectroscopy (XPS) system Purchased in 2001, the Kratos Ultra combines fast, high-sensitivity XPS (X-Ray Photoelectron Spectrometry) with a unique "real-time" imaging capability that allows us to quickly produce 2-dimensional chemical-state maps with spatial resolution as fine as 5 microns. The system also provides state-of-the-art charge compensation for non-conductive specimens. Spectra can be taken from areas as small as 15 microns in diameter. And most elements other than hydrogen and helium can be detected down to approximately 0.1%. XPS offers a quantitative determination of the elemental composition of the top 80 to 100 Angstroms of solid specimens. High-resolution scans can then be taken of elemental peaks of interest to determine chemical bonding information. In addition, specimens can be tilted to provide a shallower analysis. The system is also equipped with a cold stage, and an Ar ion gun for cleaning and depth profiling. Three X-ray sources are available: monochromated Al, and non-monochromated Mg and Al.  Now a UPS (Ultraviolet) source is added for valence band studies.  A special sample holder is for air-sensitive samples.  Specification: www.kratos.com      Location: 1434 CNSI

Focused Ion Beam System

FEI DB235 Dual-Beam Focus Ion Beam System (FIB) w/ EDS DB235 is small stage system combining a Hexalens electron column and a Magnum ion column for failure analysis and high-end sample preparation. A Schottkey emitter is used for scanning electron microscopy (SEM) under 200 – 300 kV, while Gallium liquid metal is for focus ion beam (FIB) operated at 5 to 30 kV in a current range of 1pA to 20 nA. 3D imaging can be carried out by using these two beams arranged in 52°-tilt angle. The resolution is 3 nm for SEM and 7 nm for FIB. This system is controlled under Window NT system, capable of automated TEM sample preparation.  An EDAX electron dispersive X-ray analysis system is attached for chemical analysis. Specification: www.FEI.com; www.EDAX.com      Location: 1426 CNSI

Electron Microscopy Simulation

Electron simulation software are loaded into a Mac and two PC computers that are open to users.  Location: 1429 CNSI

Electron Flight Simulator (PC)

"Electron Flight Simulation" (Version 3.1) by Small World, Inc. Environmental SEM analysis simulation and modeling software for Windows. More details: www.small-world.net

jems Microscopy Simulation Software (PC)

jems for Transmission Electron Microscopy (TEM) Simulation Major functions: (1) Build up crystal structures; (2) Kinematical/dynamic electron diffraction (ED) calculation, including Kikuchi lines, HOLZ lines and CBED; (3) High resolution image interpretation; (4) TEM transfer function; (5) Tools for diffraction index, 3D crystallographic projection, etc. Written by: Pierre A. Stadelmann;  http://cimewww.epfl.ch/people/stadelmann/jemsWebSite/jems.html

CrystalKit and MacTempas (Mac)

CrystalKit (version 1.8.3) Provider: Total Resolution Crystallographic modelling of crystals, defects and interface. The program starts from single crystal data through a data-bank of the 230 spacegroups, and accepts up to 2 different crystalstructures for creating interface structures. The final structure generated by CrystalKit can be saved in a MacTempas file or an EMS supercell file for immediate simulation of diffraction patterns and High Resolution TEM images.

MacTempas (1.7.9) by Total Resolution Multislice calculation of TEM diffraction and images. MacTempas is a full Macintosh application. Dynamical calculations of wavefunctions in thin crystal is carried out with defined slices and microscope parameters, and the output in different thickness can be controlled. Images as well as diffraction patterns at different conditions are shown in montage tables. More details: www.totalresolution.com

Gatan DigitalMicrograph

DigitalMicrograph™ is Gatan Imaging Filter (GIF) system control software and also provides users to process and analyze images with TEM-oriented functions. For example, to perform Fourier transform (FFT) from either digital images or diffraction patterns, and the diffraction can also be masked with designed patterns. This program can also read images in some popular formats, such as TIFF, PICT, etc. EL/P (v.2.1) is for acquiring and processing electron energy loss spectrum (EELS). In combine with DigitalMicrograph, the program can monitor the CCD-image of the spectra, as well as performing EELS mappings with selected edges of elements. Features of this EL/P include automated edge detection and identification, zero-loss peak tail deconvolution, thickness computation, and quantitative analysis with improved cross-section calculation. Processing spectrum with alignment and filter options, as well as Fourier transform (convolve/deconvolve) are available. Sample spectrum from a variety of compounds are provided. More details: www.gatan.com

Desktop Microscopy (Mac)

"Desktop Microscopy" (Version 2.1) by Virtual Laboratory Features: Crystallographic modeling of crystals, defects and interface; Stereographic Projection; Diffraction, Kikuchi map and CBED Bloch calculation; Dislocation imaging; Monte Carlo for electron diffraction of particles.