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Kiran's Project Page |
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Intern:Kiran Pallegadda, University of Pennsylvania
Mentor: Jeff Henness
Faculty Supervisor: Dr. Larry Coldren
Department: Electrical & Computer Engineering |
MODELING DRIVE CIRCUITRY FOR AN INTEGRATED InP OPTOELECTRONIC WAVELENGTH CONVERTER
This project involves modeling the drive circuitry of an an integrated optoelectronic (OE) wavelength converter. The single-chip device will contain a semiconductor optical amplifier (SOA) in line with a photodiode to handle the optical-to-electronic (O/E) conversion. The electrical signal will drive an electro-absorption modulator (EAM) to modulate the output of the sampled-grating distributed bragg reflector (SGDBR) laser and send out an optical signal.
In the first phase of the work, various designs of the RF device circuitry were modeled in order to determine the electrical bandwidth of each design. Simulated results yielded a reasonable bandwidth range (2.5-4 Gb/s), but the drive voltage swing was too narrow. The possible solution investigated here was to integrate a heterojunction bipolar transistor (HBT) onto the chip for increased current gain. The device design goal was an HBT with an fT of 100 GHz. The design and modeling effort tailored an initial epitaxial layer structure and also calculated parameter values that would achieve the required fT frequency during simulation.
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