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Rebecca's Project Page - RISE Summer 2008 |
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Intern: Rebecca Jenkins, Physics, California State University, San Bernardino
Mentor: Min-Ying Tsai
Faculty Supervisor: Jim Speck
Department: Materials |
ß-Ga2O3 BY PLASMA ASSISTED MOLECULAR BEAM EPITAXY
Metal oxides have been widely researched for their semiconductor properties, most commonly with band gaps in the
visible spectrum. Gallium oxide, ß-Ga2O3, has been reported having a band gap in the UV range, approximately 260
nm. This would allow for ß-Ga2O3s to replace large DUV gas lasers and lamps currently used. The ß-Ga2O3 is
grown in a layer-by-layer manner using molecular beam epitaxy, MBE. Knowing the growth conditions for varying
substrates is critical in obtaining a high quality ß-Ga2O3 film. ß-Ga2O3 has a monoclinic lattice which makes it
difficult to grow due to lattice mismatch with the substrates. It is expected that this mismatch can be reduced with
the proper growth conditions. The resultant film is analyzed using an atomic force microscope (AFM), a scanning
electron microscopy (SEM), and x-ray diffraction (XRD). The film is first analyzed in the AFM, characterizing the
surface. A smooth surface (RMS roughness of 0 to 3 nm) is optimal. The film is then placed in the SEM to
determine the thickness with respect to different growth periods. The film is finally placed in the XRD to confirm
the lattice orientation of the ß-Ga2O3. This analysis is carried out as each of the growth variables is systematically
changed. This process will allow for the determination of the most efficient method for the growth of high quality ß-
Ga2O3 films.
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