 |
IRG 4 “Nanostructured composites” |
The development of all-epitaxial metal/semiconductor nanocomposite systems by MBE (molecular beam epitaxy)-growth represents a novel and unique approach to the fabrication of precisely defined nanoscopic architectures that cannot be produced using conventional techniques. Such an approach will open up an entirely new class of materials with enormous implications for electronic devices that have the potential for new and improved performance/properties when compared to previous semiconductor technologies, thus providing materials science challenges well into the next decade.
IRG MEMBERS
| Art Gossard (Co-leader) |
Materials and Electrical & Computer Engineering |
Growth |
| Elliott Brown(Co-leader) |
Electrical & Computer Engineering |
Devices |
| Anthony Cheetham |
Chemistry & Materials |
Chemistry |
| Ram Seshadri |
Materials |
Chemistry |
| Nicola Spaldin |
Materials |
Theory |
| Jim Speck |
Materials |
Synthesis |
| Susanne Stemmer |
Materials |
Microscopy |
| Chris Van de Walle |
Materials |
Theory |
IRG AFFILIATES
| Frank DiSalvo |
Cornell MRSEC |
Chemistry |
Schematic of the proposed materials comprising nanoparticles embedded in a crystalline matrix. Note the continuous network of anions (large yellow circles) and the change in cation coordination (small circles).
