Scanning Transmission Electron Microscopy (mostly technique, for applications: see below)

Quantitative comparisons of contrast in experimental and simulated bright-field scanning transmission electron microscopy images, J. M. LeBeau, Adrian J. D'Alfonso, S. D. Findlay, S. Stemmer, L. J. Allen, Physical Review B 80, 174106 (2009).

Position averaged convergent beam electron diffraction: theory and applications, J. M. LeBeau, S. D. Findlay, L. J. Allen, S. Stemmer, Ultramicroscopy (in press).

High-angle scattering of fast electrons from crystals containing heavy elements: Simulation and experiment, J. M. LeBeau, S. D. Findlay, X. Wang, A. J. Jacobson, L. J. Allen, S. Stemmer, Phys. Rev. B 79, 214110 (2009).

Experimental quantification of annular dark-field images in scanning transmission electron microscopy, J. M. LeBeau, S. Stemmer, Ultramicroscopy 108, 1653 (2008).

Quantitative atomic resolution scanning transmission electron microscopy, J. M. LeBeau, S. D. Findlay, L. J. Allen, S. Stemmer, Physical Review Letters 100, 206101 (2008).

Influence of orientation on the contrast of high-angle annular dark-field images of silicon, D. O. Klenov, S. D. Findlay, L. J. Allen, S. Stemmer, Physical Review B 76, 014111 (2007).

Contributions to the Contrast in Experimental High-Angle Annular Dark-Field Images, D. O. Klenov, S. Stemmer, Ultramicroscopy 106, 889 (2006).

Limitations in through-focus depth sectioning in non-aberration corrected high-angle annular dark-field imaging, D. O. Klenov, S. Stemmer, Japanese Journal of Applied Physics Pt. 2, 45, L602 (2006).

 

Oxide Molecular Beam Epitaxy

Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy, B. Jalan, J. Cagnon, T. E. Mates, S. Stemmer, J. Vac. Sci. Technol. A 27, 1365 (2009).

Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction, J. M. LeBeau, R. Engel-Herbert, B. Jalan, J. Cagnon, P. Moetakef, S. Stemmer, G. B. Stephenson, Appl. Phys. Lett. 95, 142905 (2009).

Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3, R. Engel-Herbert, B. Jalan, J. Cagnon, S. Stemmer, J. Cryst. growth (in press).

Molecular beam epitaxy of SrTiO3 with a growth window, B. Jalan, P. Moetakef, S. Stemmer, Appl. Phys. Lett. 95, 032906 (2009).

Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach, B. Jalan, R. Engel-Herbert, N. J. Wright, S. Stemmer, J. Vac. Sci. Technol. A 27, 461 (2009).

Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire, B. Jalan, R. Engel-Herbert, J. Cagnon, S. Stemmer, J. Vac. Sci. Technol. A 27, 230 (2009).

 

High-k Dielectrics for III-V CMOS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition, R. Engel-Herbert, Y. Hwang, J. Cagnon, S. Stemmer, Appl. Phys. Lett. 95, 062908 (2009).

Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels, Y. Hwang, M. A. Wistey, J. Cagnon, R. Engel-Herbert, S. Stemmer, Appl. Phys. Lett. 94, 122907 (2009).

Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As, R. Engel-Herbert, Y. Hwang, J. M. LeBeau, Y. Zheng, S. Stemmer, in CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications, Mater. Res. Soc. Symp. Proc. Volume 1155, paper 1155-C13-02 (2009).

 

Perovskite Tunnel Junctions and Resistive Switching

Strain relaxation in epitaxial Pt films on (001) SrTiO3, J. Son, J. Cagnon, S. Stemmer, J. Appl. Phys.106, 043525 (2009).

Resistive switching and resonant tunneling in epitaxial perovskite tunnel barriers, J. Son, S. Stemmer, Phys. Rev. B. 79, 035105 (2009).

Electrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/SrTiO3 substrates, J. Son, J. Cagnon, S. Stemmer, Appl. Phys. Lett. 94, 062903 (2009).

Epitaxial SrTiO3 tunnel barriers on Pt/MgO substrates, J. Son, J. Cagnon, D. S. Boesch, S. Stemmer, Applied Physics Express 1, 061603 (2008)

 

High-Permittivity and Electric Field Tunable Thin Films (including BZN)

Thickness Dependence of the Dielectric Properties of Epitaxial SrTiO3 Films on (001)Pt/SrTiO3, D. S. Boesch, J. Son, J. M. LeBeau, J. Cagnon, S. Stemmer, Applied Physics Express, 091602 (2008).

Thermal leakage characteristics of Pt/SrTiO3/Pt structures, J. Son, S. Stemmer, Journal of Vacuum Science and Technology A 23, 555 (2008). [Link to UC postprint].

Properties of dielectric dead layers for SrTiO3 thin films on Pt electrodes, N. H. Finstrom, J. Cagnon, S. Stemmer, Journal of Applied Physics 101, 034109 (2007).

Dielectric losses of SrTiO3 thin film capacitors with Pt bottom electrodes at frequencies up to 1 GHz, N. H. Finstrom, J. A. Gannon, N. K. Pervez, R. A. York, S. Stemmer, Applied Physics Letters 89, 242910 (2006).

Distributed Phase Shifter with Pyrochlore Bismuth Zinc Niobate Thin Films, J. Park, J. W. Lu, D. S. Boesch, S. Stemmer, R. A. York, IEEE Microwave and Wireless Components Letters 16, 264 (2006). (link to UC postprint)

Low-loss tunable capacitors fabricated directly on gold bottom electrodes, J.W. Lu, S. Schmidt, D. S. Boesch, N. Pervez, R. A. York, S. Stemmer, Appl. Phys. Lett. 88, 112905 (2006). (link to UC postprint)

Phase transitions in textured SrTiO3 thin films on epitaxial Pt electrodes, S. P. Keane, S. Schmidt, J. W. Lu, A. E. Romanov, S. Stemmer, Journal of Applied Physics 99, 033521 (2006).

Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes, J. W. Lu, S. Schmidt, Y.-W. Ok, S. P. Keane, S. Stemmer, Journal of Applied Physics 98, 054101 (2005). (link to UC postprint)

Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films, J. Park, J. W. Lu, S. Stemmer, R. A. York, Journal of Applied Physics 97, 084110 (2005). (link to UC postprint)

Microstructure of epitaxial SrTiO3/Pt/Ti/sapphire heterostructures, S. Schmidt, Y.-W. Ok, D. O. Klenov, J.W. Lu, S. P. Keane, S. Stemmer, Journal of Materials Research 20, 2261 (2005).

Microstructure and dielectric properties of textured SrTiO3 thin films (Invited Feature Article), S. Schmidt, J. W. Lu, S. P. Keane, L. D. Bregante, D. O. Klenov, S. Stemmer, J. Amer. Ceram. Soc. 88, 789 (2005). (link to UC postprint)

Temperature dependence of the dielectric tunability of pyrochlore bismuth zinc niobate thin films, A. K. Tagantsev, J. W. Lu, S. Stemmer, Appl. Phys. Lett. 86, 032901 (2005). (link to UC postprint)

Influence of strain on the dielectric relaxation of pyrochlore bismuth zinc niobate thin films, J. Lu, D. O. Klenov, S. Stemmer, Appl. Phys. Lett. 84, 957-959 (2004). (link to UC postprint)

Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputtering, J. Lu, S. Stemmer, Appl. Phys. Lett. 83, 2411-2413 (2003).

 

High-k Dielectrics and Metal Gates for Si CMOS

Detection and mobility of hafnium in SiO2, D. O. Klenov, T. E. Mates, S. Stemmer, Applied Physics Letters 89, 041918 (2006). (link to UC postprint)

Influence of AlN layers on the interface stability of HfO2 gate dielectric stacks, M. P. Agustin, H. Alshareef, M. A. Quevedo-Lopez, S. Stemmer, Appl. Phys. Lett. 89, 041906 (2006). (link to UC postprint)

Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks, M. P. Agustin, G. Bersuker, B. Foran, L. A. Boatner, S. Stemmer, Journal of Applied Physics 100, 024103 (2006).

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes, M. P. Agustin, L. R. C. Fonseca, J. C. Hooker, S. Stemmer, Applied Physics Letters 87, art.-no. 121909 (2005). (link to UC postprint)

The interface between single crystalline (001) LaAlO3 and (001) silicon, D. O. Klenov, D. G. Schlom, H. Li, S. Stemmer, Japanese Journal of Applied Physics Pt. 2 vol. 44, Issue 20, L617 (2005).

Extended defects in epitaxial Sc2O3 films grown on (111) Si, D. O. Klenov, L. F. Edge. D. G. Schlom, S. Stemmer, Applied Physics Letters 86, art.no. 051901 (2005). (link to UC postprint)

Thermodynamic Considerations in the Stability of Binary Oxides for Alternative Gate Dielectrics in CMOS, S. Stemmer, Journal of Vacuum Science and Technology B 22, 791-800 (2004). (link to UC postprint)

Grazing incidence small angle x-ray scattering studies of phase separation in hafnium silicate films, S. Stemmer, Y. Lu, B. Foran, P. S. Lysaght, S. K. Streiffer, P. Fuoss, S. Seifert, Appl. Phys. Lett. 83, 3141-3143 (2003).

 

Interface Atomic Structures and Applications of STEM

Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces, J. M. LeBeau, Q. O. Hu, C. J. Palmstrom, S. Stemmer, Appl. Phys. Lett. 93, 121909 (2008).

Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers, D. O. Klenov, J. M. O. Zide, J. M. LeBeau, A. C. Gossard, S. Stemmer, Appl. Phys. Lett. 90, 121917 (2007).

Atomic Structure of (111) SrTiO3/Pt Interfaces, S. Schmidt, D. O. Klenov, S. P. Keane, J. W. Lu, T. E. Mates, S. Stemmer, Appl. Phys. Lett. 88, 131914 (2006). (link to UC postprint)

The interface between single crystalline (001) LaAlO3 and (001) silicon, D. O. Klenov, D. G. Schlom, H. Li, S. Stemmer, Japanese Journal of Applied Physics Pt. 2 vol. 44, Issue 20, L617 (2005).

Interface atomic structure of epitaxial ErAs layers on (001) In0.53Ga0.47As and GaAs, D. O. Klenov, J. M. Zide, J. D. Zimmerman, A. C. Gossard, S. Stemmer, Applied Physics Letters 86, 241901 (2005). (link to UC postprint)

Extended defects in epitaxial Sc2O3 films grown on (111) Si, D. O. Klenov, L. F. Edge. D. G. Schlom, S. Stemmer, Applied Physics Letters 86, art.no. 051901 (2005). (link to UC postprint)

Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers, D. O. Klenov, D. C. Driscoll, A. C. Gossard, S. Stemmer, Appl. Phys. Lett. 86, 111912 (2005).