Chris G. Van de Walle

Photo

Address:

 

Teaching:

Current:

Fall 2008: Materials 228,
Computational Materials

 

 

 

 Past:

Spring 2008: Materials/ECE 211B,
Engineering Quantum Mechanics II

Winter 2008: Materials/ECE 211A,
Engineering Quantum Mechanics I

Fall 2007: Materials 288N,
First-principles Calculations for Materials

Spring 2007: Materials 288M,
Hydrogen in Materials

Winter 2007: Materials 200B,
Electronic and Atomic Structure of Materials

Fall 2006: Materials 228,
Computational Materials

Spring 2006: Materials/ECE 211B,
Engineering Quantum Mechanics II

Winter 2006: Materials 200B,
Electronic and Atomic Structure of Materials

Fall 2005: Materials 288N,
First-principles Calculations for Materials

Spring 2005: Materials 288M,
Hydrogen in  Materials

Winter 2005: Materials 228,
Computational Materials

 

Research Highlights:

"Hydrogen Multicentre Bonds"


Anderson Janotti and Chris G. Van de Walle

 

Nature Materials 6, 44 (2007)

 

 

 

 

 

 

 

 

“Surface reconstructions on InN and GaN polar and nonpolar surfaces”

 

D. Segev and C. G. Van de Walle, Surf. Sci. 601, L15 (2007).

 

“Surface Sciences Perspectives” commentary by J. Pollmann: Surf. Sci. 601, 883 (2007).

“Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces”

 

D. Segev and C. G. Van de Walle,  Europhys. Lett. 76, 305 (2006).

 

 

 

 

 

 

 

"Oxygen Vacancies in ZnO"
A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. 87, 122102 (2005).

Oxides as Semiconductors:

An Interdisciplinary Research Group in the Materials Research Laboratory

 

 

 

 

 

Image of hydrogen in CdTe

"Universal alignment of hydrogen levels in semiconductors, insulators, and solutions"
C. G. Van de Walle and J. Neugebauer, Nature 423, 626 (2003).

Lineup of hydrogen levels

 

 

 

 

 

 

 

Group:

Anderson Janotti
Project Scientist

Kris Delaney

Patrick Rinke

Min Sik Park

Khang Hoang

 






Justin Weber

Joel Varley

Gareth Wilson-Short

Qimin Yan

John Lyons

 

 

 

 

 

 

 

Former Group Members (UCSB):

David Segev
(now at Tower

Semiconductors, Israel)

Amra Peles
(now at United Technologies)

Abhishek Singh
(now at Rice University)

               

 

 

 

 

 

 

Former Visitors (UCSB):


Prof. Sukit Limpijumnong
(Suranaree University of Technology, Thailand)

Pakpoom Ruanchan

(Suranaree University of Technology, Thailand)

Prof. Jörg Neugebauer
(Max Planck Institute for Steel Research, Düsseldorf, Germany)

Dr. Naoto Umezawa

(National Institute for Materials Science, Tsukuba, Japan)

 

 

 

 

 

 

 

 



The group  (with Prof. J. Neugebauer) 12/03/06

Anderson’s party

 

 

 

 

 

 

 

 

 

 

Short CV:

Professional experience

Ph. D. E. E., Stanford University, 1986.

Postdoctoral Scientist, IBM T. J. Watson Research Center, Yorktown Heights, New York (1986-1988).

Senior Member of Research Staff, Philips Laboratories, Briarcliff Manor, New York (1988-1991).

Adjunct Professor, Columbia University, New York (1991).

Principal Scientist/Senior Member/Member of Research Staff, Xerox Palo Alto Research Center (PARC), Palo Alto, California (1991-2004 ).

Alexander von Humboldt US Senior Scientist at the Fritz-Haber-Institut and the Paul-Drude-Institut, Berlin, Germany (May-October 1999).
Professor, Materials Department, University of California, Santa Barbara (2004-).

Honors

David Adler Award, American Physical Society, 2002

PARC Excellence Award, 2003
PARC Golden Acorn Award, 2002

Humboldt Research Award for Senior US Scientist, Alexander von Humboldt Foundation, Germany, 1998

Conference chair:

  • Organizer, International Symposium on Materials Issues in Hydrogen Production and Storage, 2006
  • Program Chair, 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004
  • Gordon Conference on Point and Line Defects in Semiconductors, 1998
  • 23rd Conference on Physics and Chemistry of Semiconductor Interfaces (PCSI), 1996
  • 7th Trieste Semiconductor Symposium: Wide-Band-Gap Semiconductors, 1992

Fellow, American Physical Society

Member of the Editorial Board, Physical Review Letters, 1996-1999

Publications and presentations

Over 200 scientific publications.
18 U.S. patents; three patents pending.
Over 100 Invited Presentations at International Conferences and Schools. Numerous invited seminars at universities and industrial or government laboratories.

Research interests:

  • Novel electronic materials; wide-band-gap semiconductors (III-V nitrides, II-VI compounds, …), oxides.
  • Physics and chemistry of hydrogen interactions with solids, liquids, and molecular systems.
  • Hydrogen in materials: storage, production (photoelectrochemical cells).
  • Computational physics. Density-functional theory, pseudopotentials.  Atomic and electronic structure of crystalline, polycrystalline and amorphous materials, interfaces, surfaces, defects.
  • Semiconductor heterojunctions and superlattices; effects of strain; deformation potentials.  Metal-semiconductor interfaces, Schottky barriers.
  • Defects and impurities in solids, doping, diffusion.  Calculation of hyperfine parameters and vibrational modes.
  • Device simulations; optical gain in laser structures.

Complete CV and publication list (pdf, 05/10/08)

Presentations:

Theory of Hydrogen-Related Levels in Semiconductors and Oxides (IEDM 2005).

Oxides as Semiconductors

Links:

International Symposium on Materials Issues in Hydrogen Production and Storage

 

updated: 7/16/08