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Native
defects |
Gallium
nitride
(GaN) is an outstanding material for semiconductor light emitters in
the
blue-green and UV region of the spectrum (see Blue Laser Diodes). We
have
been engaged in theoretical efforts to address some of the most
important
issues that hamper technological applications of this material. Our
tools
in these investigations are state-of-the-art first-principles
calculations
based on pseudopotentials and density-functional theory. This work was
performed by Chris Van de Walle in collaboration with Jörg
Neugebauer,
Catherine Stampfl, and Sukit Limpijumnong, with sponsorship by DARPA,
ONR,
and AFOSR.
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