Van de Walle
Computational Materials Group
vandewalle@mrl.ucsb.edu | (805) 893-7144

Materials Department, University of California, Santa Barbara, CA 93106-5050

 


Defects for quantum computing

 
Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV) center stands out for its robustness because its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. We have studied analogous defects in other materials as a way to develop a systematic approach to identify deep center defects with similar properties to the NV center. Currently, we are using this approach to analyze the properties of defects, their hosts, and their impact on quantities important for quantum computing, which includes spin-state lifetime, defect stability, and internal optical transitions.

NV center in SiC
Defect-level diagrams for vacancy-related complexes. These diagrams show the single-particle defect states for (A) the and (B) the NV-1 in diamond, as well as for (C) the and (D) the in 4H-SiC. The spin-majority (spin-minority) channel is denoted by upward- (downward-) pointing arrows  


References:
J. R. Weber, W. F. Koehl, J. B. Varley, A. Janotti, B. B. Buckley, C. G. Van de Walle, and D. D. Awschalom, Proceedings of the National Academy of Sciences, 107 8513 (2010)

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