Creating high performance, reliable, and safe energy storage solutions are essential in developing sustainable energy technologies. In this work, we propose Sn-doped gallium oxide (GSO) as a candidate for an electrode in energy storage devices, specifically for microbatteries and microsupercapacitors. Gallium oxide is an ultra-wide bandgap semiconductor typically studied for its applications in gas sensing and power electronics. When doped with tin, gallium oxide has demonstrated enhanced catalytic performance and applied towards metal-air batteries. Gallium oxide’s thermal and chemical stability, along with increased conductivity and interstitial surface area from tin-doping, make it a promising candidate for energy storage applications. The GSO films were deposited using a co-sputtered approach, achieving a range of dopant concentrations by varying the sputtering power (0-45W) of the Sn target. The GSO films were then characterized to understand the effect of Sn-content on the thin films’ structure and electrochemical properties. The results indicate promising performance, especially as an anode for sodium-ion batteries.