In recent years, gallium oxide has garnered attention in the semiconductor field due to its ultra-wide bandgap, high critical electric field strength, amenability to doping, and transparency. These qualities have made it desirable for a wide range of applications: solar-blind UV photodetectors, alternatives to GaN and SiC power electronics, metal-oxide-semiconductor field-effect transistors (MOSFETs), and solar cells. In this research project, we synthesized Al-alloyed gallium oxide via bulk solid-state synthesis for Al compositions ranging from 0 to 0.5 mol. Additionally, we deposited thin films of the bulk material onto c-plane sapphire substrates via pulsed laser deposition (PLD). We expected that alloying gallium oxide with aluminum would improve its thermal conductivity and increase its bandgap. To characterize the bulk material and films, we used X-ray diffraction (XRD), UV-visible spectroscopy, and scanning electron. microscopy (SEM) to observe changes in their structural, electronic, and optical properties. The effect of Al composition on these properties of gallium oxide was established.